tshf6210 www.vishay.com vishay semiconductors rev. 1.3, 23-aug-11 1 document number: 81734 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high speed infrared emitting diode, 890 nm, gaalas double hetero description tshf6210 is an infrared, 890 nm emitting diode in gaalas double hetero (dh) technology with high radiant power and high speed, molded in a clear, untinted plastic package. features ? package type: leaded ? package form: t-1? ? dimensions (in mm): ? 5 ? peak wavelength: p = 890 nm ? high reliability ? high radiant power ? high radiant intensity ? angle of half intensity: ? = 10 ? low forward voltage ? suitable for high pulse current operation ? high modulation bandwidth: f c = 12 mhz ? good spectral matching with si photodetectors ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec note ** please see document vishay material category policy: www.vishay.com/doc?99902 applications ? infrared high speed remote control and free air data transmission systems with hi gh modulation frequencies or high data transmission rate requirements ? transmission systems according to irda requirements and for carrier frequency based systems (e.g. ask/fsk - coded, 450 khz or 1.3 mhz) ? smoke-automatic fire detectors note ? test conditions see table basic characteristics note ? moq: minimum order quantity 94 8389 product summary component i e (mw/sr) ? (deg) p (nm) t r (ns) tshf6210 180 10 890 30 ordering information ordering code packaging remarks package form tshf6210 bulk moq: 4000 pcs, 4000 pcs/bulk t-1? absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 1.5 a power dissipation p v 160 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s, 2 mm from case t sd 260 c thermal resistance j unction/ambient j-std-051, lead s 7 mm soldered on pcb r thja 230 k/w
tshf6210 www.vishay.com vishay semiconductors rev. 1.3, 23-aug-11 2 document number: 81734 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - power dissipation limit vs. ambient temperature fig. 2 - forward current limit vs. ambient temperature 0 20 40 60 80 100 120 140 160 180 0 102030405060708090100 21211 t am b - am b ient temperat u re (c) p v - po w er dissipation (m w ) r thja = 230 k/ w 0 20 40 60 80 100 120 0 10 203040 50607080 90100 t am b - am b ient temperat u re (c) 21212 i f - for w ard c u rrent (ma) r thja = 230 k/ w basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f 1.4 1.6 v i f = 1 a, t p = 100 s v f 2.3 v temperature coefficient of v f i f = 1 ma tk vf - 1.8 mv/k reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 125 pf radiant intensity i f = 100 ma, t p = 20 ms i e 120 180 360 mw/sr i f = 1 a, t p = 100 s i e 1800 mw/sr radiant power i f = 100 ma, t p = 20 ms e 50 mw temperature coefficient of e i f = 100 ma tk e - 0.35 %/k angle of half intensity ? 10 deg peak wavelength i f = 100 ma p 890 nm spectral bandwidth i f = 100 ma ? 40 nm temperature coefficient of p i f = 100 ma tk p 0.25 nm/k rise time i f = 100 ma t r 30 ns fall time i f = 100 ma t f 30 ns cut-off frequency i dc = 70 ma, i ac = 30 ma pp f c 12 mhz v irtual source diameter d3.7mm
tshf6210 www.vishay.com vishay semiconductors rev. 1.3, 23-aug-11 3 document number: 81734 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 basic characteristics (t amb = 25 c, unless otherwise specified) fig. 3 - pulse forward current vs. pulse duration fig. 4 - forward current vs. forward voltage fig. 5 - radiant intensity vs. forward current fig. 6 - radiant power vs. forward current fig. 7 - relative radi ant power vs. wavelength fig. 8 - relative radiant in tensity vs. angular displacement 100 1000 0.01 0.1 1 10 100 t p - p u lse d u ration (ms) 16031 t p /t = 0.01 0.05 0.2 0.5 0.1 0.02 t am b < 50 c i f - for w ard c u rrent (ma) 18873 i f - for w ard c u rrent (ma) 1000 100 10 1 v f - for w ard voltage (v) 024 t p = 100 s t p /t = 0.001 13 1 10 100 1000 10 000 1 10 100 1000 21213 i f - for w ard c u rrent (ma) i e - radiant intensity (m w /sr) t p = 0.1 ms 0.1 1 10 100 1000 11 0 100 1000 16971 i f - for w ard c u rrent (ma) - radiant po w er (m w ) e 800 900 - w a v elength (nm) 1000 20082 0 0.25 0.5 0.75 1.0 1.25 e rel - relati v e radiant po w er 0.4 0.2 0 i e rel - relati v e radiant intensity 15989 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 ? - ang u lar displacement
tshf6210 www.vishay.com vishay semiconductors rev. 1.3, 23-aug-11 4 document number: 81734 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters 35.5 0.55 0.5 + 0.15 - 0.05 5 0.15 area not plane technical dra w ings according to din specifications 6.544-5259.02-4 iss u e: 8; 19.05.09 95 10917 8.7 0.3 2.54 nom. 1 min. < 0.7 0.5 + 0.15 - 0.05 (4.7) a c 5.8 0.15 7.7 0.15 0.6 + 0.2 - 0.1 r 2.49 (sphere)
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